EPC2010

EPC2010

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Kirjeldus GANFET N-CH 200V 12A DIE
Kategooria diskreetsed pooljuhttooted
Perekond transistorid - fetid, mosfetid - üksikud
Eluring: New from this manufacturer.
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Andmeleht EPC2010 PDF

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Ühikuhind $ 0.00000

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EPC2010 Tehnilised andmed

Tüüp Kirjeldus
seeria:eGaN®
pakett:Tape & Reel (TR)Cut Tape (CT)
osa staatus:Discontinued at Digi-Key
feti tüüp:N-Channel
tehnoloogia:GaNFET (Gallium Nitride)
äravoolu allika pinge (vdss):200 V
vool - pidev äravool (id) @ 25°c:12A (Ta)
ajami pinge (max rds sees, min rds sees):5V
rds on (max) @ id, vgs:25mOhm @ 6A, 5V
vgs(th) (max) @ id:2.5V @ 3mA
väravalaeng (qg) (max) @ vgs:7.5 nC @ 5 V
vgs (max):+6V, -4V
sisendmahtuvus (ciss) (max) @ vds:540 pF @ 100 V
fet funktsioon:-
võimsuse hajumine (max):-
Töötemperatuur:-40°C ~ 125°C (TJ)
paigaldustüüp:Surface Mount
tarnija seadmepakett:Die
pakend / ümbris:Die

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